IRFB17N50L Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A)

IRFB17N50L, SiHFB17N50L
Vishay Siliconix
1 000 000
10 000
1000
V_GS = 0 V,
Ciss = Cgs + Cgd, Cds
Crss = Cgd
Coss = Cds + Cgd
f = 1 MHz
Shorted
Ciss
Coss
100
10
1
Crss
10
100
V_DS, Drain-to-Source Voltage (V)
1000
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
ID = 16 A
16
12
V_DS = 400 V
V_DS = 250 V
V_DS = 100 V
8
4
0
0
30
60
90
120
150
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
TJ = 150 °C
10
TJ = 25 °C
1
V_GS = 0 V
0.1
0.2
0.6
0.9
1.3
1.6
V_SD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
100
OPERATING IN THIS AREA LIMITED
BY RDS(on)
10 μs
10
100 μs
1 ms
1
10 ms
TC = 25 °C
TJ = 150 °C
Single Pulse
0.1
10
100
1000
V_DS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
10000
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4
Document Number: 91098
S-81263-Rev. A, 21-Jul-08