IRF9610S Datasheet, PDF (6/10 Pages) International Rectifier – Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)

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V_DS
V_GS
R_g
R_D
D.U.T.
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
-
+V_DD
Fig. 17a - Switching Time Test Circuit
V_GS
10 %
t_d(on) t_r
90 %
V_DS
t_d(off) t_f
Fig. 17b - Switching Time Waveforms
IRF9610S, SiHF9610S
Vishay Siliconix
- 10 V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 18a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
-
D.U.T. ^{+ VDS}
V_GS
- 3 mA
I_G
I_D
Current sampling resistors
Fig. 18b - Gate Charge Test Circuit
S12-1558-Rev. D, 02-Jul-12
6
Document Number: 91081
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