IRF9610S Datasheet, PDF (2/10 Pages) International Rectifier – Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)

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IRF9610S, SiHF9610S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)^a
R_thJA
R_thJA
Maximum Junction-to-Case (Drain)
R_thJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
-
MAX.
62
40
6.4
UNIT
°C/W
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
V_DS
V_DS/T_J
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
V_GS = 0, I_D = - 250 μA
Reference to 25 °C, I_D = - 1 mA
V_DS = V_GS, I_D = - 250 μA
V_GS = ± 20 V
V_DS = - 200 V, V_GS = 0 V
V_DS = - 160 V, V_GS = 0 V, T_J = 125 °C
V_GS = - 10 V
I_D = - 0.90 A^b
V_DS = - 50 V, I_D = - 0.90 A^b
- 200
-
-2
-
-
-
-
0.90
-
- 0.23
-
-
-
-
-
-
-
-
-4
± 100
- 100
- 500
3
-
V
V/°C
V
nA
μA

S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
L_D
Internal Source Inductance
L_S
Drain-Source Body Diode Characteristics
-
V_GS = 0 V,
V_DS = - 25 V,
-
f = 1 MHz, see fig. 10
-
-
V_GS = - 10 V
I_D = - 3.5 A, V_DS = - 160 V,
see fig. 11 and 18^b
-
-
-
V_DD = - 100 V, I_D = - 0.90 A,
-
R_G = 50 , R_D = 110 , see fig. 17^b
-
-
Between lead,
6 mm (0.25") from
D
-
package and center of
G
die contact
-
S
170
-
50
-
pF
15
-
-
11
-
7
nC
-
4
8
-
15
-
ns
1
-
8
-
4.5
-
nH
7.5
-
Continuous Source-Drain Diode Current
I_S
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Current^a
I_SM
p - n junction diode
D
G
S
-
-
- 1.8
A
-
-
-7
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
V_SD
T_J = 25 °C, I_S = - 1.8 A, V_GS = 0 V^b
-
-
- 5.8
V
t_rr
-
T_J = 25 °C, I_F = - 1.8 A, dI/dt = 100 A/μs^b
240
360
ns
Q_rr
-
1.7
2.6
μC
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by L_S and L_D)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Pulse width  300 μs; duty cycle  2 %.
S12-1558-Rev. D, 02-Jul-12
2
Document Number: 91081
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