IRF9610S Datasheet, PDF (1/10 Pages) International Rectifier – Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)

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IRF9610S, SiHF9610S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
- 200
V_GS = - 10 V
3
Q_g (Max.) (nC)
11
Q_gs (nC)
7
Q_gd (nC)
4
Configuration
Single
S
D²PAK (TO-263)
G
GD
S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
Note
* Lead (Pb)-containing terminations are not RoHS-compliant.
Exemptions may apply.
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D²PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D²PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2 W in a typical surface
mount application.
D²PAK (TO-263)
SiHF9610S-GE3
SiHF9610STRR-GE3
SiHF9610STRL-GE3
IRF9610SPbF
SiHF9610S-E3
IRF9610STRRPbF
IRF9610STRLPbF
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
V_GS at - 10 V
T_C = 25 °C
T_C = 100 °C
Linear Derating Factor
Linear Derating Factor (PCB Mount)^d
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^d
Peak Diode Recovery dV/dt^b
T_C = 25 °C
T_A = 25 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
V_DS
V_GS
I_D
I_DM
P_D
dV/dt
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. I_SD  - 1.8 A, dI/dt  70 A/μs, V_DD  V_DS, T_J  150 °C.
c. 1.6 mm from case.
d. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
- 200
± 20
- 1.8
-1
-7
0.16
0.025
20
3
-5
- 55 to + 150
300^c
UNIT
V
A
W/°C
W
V/ns
°C
S12-1558-Rev. D, 02-Jul-12
1
Document Number: 91081
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000