IRF9610S Datasheet, PDF (3/10 Pages) International Rectifier – Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF9610S, SiHF9610S
Vishay Siliconix
- 2.40
- 1.92
V_GS = - 10, - 9, - 8, - 7 V
- 2.40
- 1.92
V_GS = - 10, - 9, - 8 V
-7V
- 1.44
-6V
- 0.96
- 0.48
-5V
80 µs Pulse Test
-4V
0.00
0
- 10
- 20
- 30
- 40
- 50
91081_01
V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
- 1.44
-6V
- 0.96
- 0.48
-5V
0.00
0
80 µs Pulse Test
-2
-4
-6
-4V
-8
- 10
91081_03
V_DS, Drain-to-Source Voltage (V)
Fig. 3 - Typical Saturation Characteristics
- 2.40
- 1.92
- 1.44
T_J = - 55 °C
T_J = 25 °C
T_J = 125 °C
- 0.96
- 0.48
0.00
0
80 µs Pulse Test
V_DS > I_D(on) x R_DS(on) max.
-2
-4
-6
-8
- 10
91081_02
V_GS, Gate-to-Source Voltage (V)
Fig. 2 - Typical Transfer Characteristics
10²
Operation in this area limited
5
by R_DS(on)
2
10
5
100 µs
2
1
1 ms
5
2
0.1
1²
T_C = 25 °C
T_J = 150 °C
Single Pulse
10 ms
5 ₁₀ 2
5 ₁₀₂ 2
5 ₁₀₃
91081_04
Negative V_DS, Drain-to-Source Voltage (V)
Fig. 4 - Maximum Safe Operating Area
2.0
1.0
0.5 D = 0.5
0.2 ^0.2
0.1 ^0.1
0.05
0.05
0.02
0.02 ^0.01
0.01
10^{-5 2}
Single Pulse (Transient
Thermal Impedence)
5 _10-4 2
5 _10-3 2
5 _10-2 2
P_DM
t₁
t₂
Notes:
1. Duty Factor, D = t₁/t₂
2. Per Unit Base = R_thJC = 6.4 °C/W
3. T_JM - T_C = P_DM Z_thJC(t)
5 _0.1 2
5 _1.0 2
5 ₁₀
91081_05
t₁, Square Wave Pulse Duration (s)
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to.Case vs. Pulse Duration
S12-1558-Rev. D, 02-Jul-12
3
Document Number: 91081
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