IRF9610S Datasheet, PDF (4/10 Pages) International Rectifier – Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)

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IRF9610S, SiHF9610S
Vishay Siliconix
2.0
80 µs Pulse Test
V_DS > I_D(on) x R_DS(on) max.
1.6
1.2
0.8
T_J = - 55 °C
T_J = 25 °C
T_J = 125 °C
0.4
0.0
0
- 0.48 - 0.96 - 1.44 - 1.92 - 2.40
91081_06
I_D, Drain Current (A)
Fig. 6 - Typical Transconductance vs. Drain Current
- 10.0
- 5.0
- 2.0
- 1.0
- 0.5
T_J = 150 °C
T_J = 25 °C
- 0.2
- 0.1
- 2.0
- 3.2
- 4.4
- 5.6
- 6.8
- 8.0
91081_07
V_SD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
2.5 _{ID = - 0.6 A}
V_GS = - 10 V
2.0
1.5
1.0
0.5
0.0
- 40
0
40
80
120
160
91081_09
T_J, Junction Temperature (°C)
Fig. 9 - Normalized On-Resistance vs. Temperature
500
400
300
200
100
0
0
91081_10
C_iss
C_oss
C_rss
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds Shorted
C_rss = C_gd
C_oss = C_ds
+
C_gs, C_gd
C_gs + C_gd
≈ C_gs + C_gd
- 10
- 20
- 30
- 40
- 50
V_DS, Drain-to-Source Voltage (V)
Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage
1.25
1.15
1.05
0.95
0.85
0.75
- 40
0
40
80
120
160
91081_08
T_J, Junction Temperature (°C)
Fig. 8 - Breakdown Voltage vs. Temperature
20 _{ID = - 1.8 A}
16
12
V_DS = - 100 V
V_DS = - 60 V
V_DS = - 40 V
8
4
For test circuit
see figure 18
0
0
2
4
6
8
91081_11
Q_G, Total Gate Charge (nC)
Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage
S12-1558-Rev. D, 02-Jul-12
4
Document Number: 91081
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