FA57SA50LCP Datasheet, PDF (6/9 Pages) Vishay Siliconix – Power MOSFET, 57 A

FA57SA50LCP
Vishay Semiconductors
Power MOSFET, 57 A
Q_G
10 V
Q_GS
Q_GD
V_G
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
D.U.T.
+
- ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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6
D.U.T.
+
2
-
1
R_g
+
Circuit layout considerations
• Low stray inductance
3
• Ground plane
• Low leakage inductance
-
current transformer
- ⁴⁺
• dV/dt controlled by R_g
• Driver same type as D.U.T.
• I_SD controlled by duty factor "D"
• D.U.T. - Device Under Test
+
- ^VDD
Fig. 13c - Peak Diode Recovery dV/dt Test Circuit
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
V_GS=10V _*
D.U.T. I_SD Waveform
Reverse
Recovery
Body Diode Forward
Current
Current
di/dt
D.U.T. V_DS Waveform _{Diode Recovery}
dv/dt
V_DD
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
I_SD
* V_GS = 5V for Logic Level Devices
Fig. 14 - For N-Channel Power MOSFETs
For technical questions within your region, please contact one of the following: Document Number: 94548
[e-mail], [e-mail], [e-mail]
Revision: 12-May-10