FA57SA50LCP Datasheet, PDF (3/9 Pages) Vishay Siliconix – Power MOSFET, 57 A

Power MOSFET, 57 A
FA57SA50LCP
Vishay Semiconductors
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
1
0.1
0.1
20μs PULSE WIDTH
TJ = 25 °C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
10
20μs PULSE WIDTH
TJ = 150 °C
1
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
1000
T_J = 150 °C
100
10
T_J = 25 °C
1
V DS= 50V
20μs PULSE WIDTH
0.1
4
5
6
7
8
9
10
V_GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3.0 _{ID = 57A}
2.5
2.0
1.5
1.0
0.5
V_GS= 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
15000
12000
9000
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
6000
C_oss
3000
C_rss
0
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain to Source Voltage
20 _{ID = 57 A}
16
V_DS = 400V
V_DS = 250V
V_DS = 100V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
60 120 180 240 300 360
Q_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate to Source Voltage
Document Number: 94548 For technical questions within your region, please contact one of the following:
Revision: 12-May-10
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