FA57SA50LCP Datasheet, PDF (5/9 Pages) Vishay Siliconix – Power MOSFET, 57 A

Power MOSFET, 57 A
FA57SA50LCP
Vishay Semiconductors
1
0.1 ^{D = 0.50}
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
0.001
0.00001
0.0001
0.001
2. Peak T_J = P _DM x Z _thJC + T_C
0.01
0.1
1
t₁, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction to Case
15 V
L
V_DS
Driver
R_G
20 V
t_p
D.U.T
I_AS
0.01 Ω
+
- ^VDD
A
Fig. 12a - Unclamped Inductive Test Circuit
V(BR)DSS
tp
I _AS
Fig. 12b - Unclamped Inductive Waveforms
1500
ID
TOP
25A
35A
1200
BOTTOM 57A
900
600
300
0
25
50
75
100
125
150
Starting T_J, Junction Temperature ( ^°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Document Number: 94548 For technical questions within your region, please contact one of the following:
Revision: 12-May-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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