FA57SA50LCP Datasheet, PDF (4/9 Pages) Vishay Siliconix – Power MOSFET, 57 A

FA57SA50LCP
Vishay Semiconductors
Power MOSFET, 57 A
1000
100 ^{TJ = 150°C}
10
T_J = 25°C
1
V_GS = 0 V
0.1
0.2
0.8
1.4
2.0
2.6
V_SD ,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source Drain Diode Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
100us
10
1ms
T_C = 25 °C
T_J = 150 °C
Single Pulse
1
1
10
10ms
100
1000
10000
V_DS , Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
60.0
50.0
40.0
30.0
20.0
10.0
0.0
25
50
75
100
125
150
T_C , Case Temperature ( °C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
V_DS
V_GS
R_G
R_D
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+
-
V_DD
Fig. 10a - Switching Time Test Circuit
V_DS
90%
0%
GS
t_d(on) t_r
t_d(off) t_f
Fig. 10b - Switching Time Waveforms
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For technical questions within your region, please contact one of the following: Document Number: 94548
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Revision: 12-May-10