FA57SA50LCP Datasheet, PDF (2/9 Pages) Vishay Siliconix – Power MOSFET, 57 A

FA57SA50LCP
Vishay Semiconductors
Power MOSFET, 57 A
THERMAL RESISTANCE
PARAMETER
Junction to case
Case to sink, flat, greased surface
SYMBOL
R_thJC
R_thCS
TYP.
-
0.05
MAX.
0.20
-
UNITS
°C/W
ELECTRICAL CHARACTERISTCS (T_J = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
Static drain to source on-resistance
V_(BR)DSS
ΔV_(BR)DSS/ΔT_J
R_DS(on) ⁽¹⁾
V_GS = 0 V, I_D = 1.0 mA
Reference to 25 °C, I_D = 1 mA
V_GS = 10 V, I_D = 34 A
Gate threshold voltage
Forward transconductance
Drain to source leakage current
V_GS(th)
g_fs
I_DSS
V_DS = V_GS, I_D = 250 μA
V_DS = 50 V, I_D = 34 A
V_DS = 500 V, V_GS = 0 V
V_DS = 400 V, V_GS = 0 V, T_J = 125 °C
Gate to source forward leakage
Gate to source reverse leakage
Total gate charge
Gate to source charge
Gate to drain ("Miller") charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Internal source inductance
Input capacitance
Output capacitance
Reverse transfer capacitance
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
L_S
C_iss
C_oss
C_rss
V_GS = 20 V
V_GS = - 20 V
I_D = 57 A
V_DS = 400 V
V_GS = 10 V; see fig. 6 and 13 ⁽¹⁾
V_DD = 250 V
I_D = 57 A
R_g = 2.0 Ω (internal)
R_D = 4.3 Ω, see fig. 10 ⁽¹⁾
Between lead, and center of die contact
V_GS = 0 V
V_DS = 25 V
f = 1.0 MHz, see fig. 5
Note
(1) _{Pulse width ≤ 300 μs, duty cycle ≤ 2 %}
MIN.
500
-
-
2.0
43
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.62
-
-
-
-
-
-
-
225
51
98
32
152
108
118
5.0
10 000
1500
50
MAX. UNITS
-
V
-
V/°C
0.08
Ω
4.0
V
-
S
50
μA
500
200
nA
- 200
338
77
nC
147
-
-
ns
-
-
-
nH
-
-
pF
-
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNITS
Continuous source current (body diode)
Pulsed source current (body diode)
I_S
MOSFET symbol showing
D
-
the integral reverse p-n
G
I_SM ⁽¹⁾
junction diode.
-
S
-
57
A
-
228
Diode forward voltage
V_SD ⁽²⁾
T_J = 25 °C, I_S = 57 A, V_GS = 0 V
-
-
1.3
V
Reverse recovery time
Reverse recovery charge
t_rr
-
T_J = 25 °C, I_F = 57 A, dI/dt = 100 A/μs ⁽²⁾
901 1351 ns
Q_rr
-
15
23
μC
Forward turn-on time
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by L_S + L_D)
Notes
(1) _{Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)}
(2) _{Pulse width ≤ 300 μs, duty cycle ≤ 2 %}
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Revision: 12-May-10