FA38SA50LCP Datasheet, PDF (6/9 Pages) Vishay Siliconix – Power MOSFET, 38 A

FA38SA50LCP
Vishay Semiconductors
Power MOSFET, 38 A
D.U.T.
+
2
-
+
Circuit layout considerations
• Low stray inductance
3
• Ground plane
• Low leakage inductance
current transformer
-
- ⁴+
1
R_G
• dV/dt controlled by R_G
• Driver same type as D.U.T.
• I_SD controlled by duty factor "D"
• D.U.T. - Device under test
Fig. 17 - Peak Diode Recovery dV/dt Test Circuit
+
- ^VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
V_GS=10V _*
D.U.T. I_SD Waveform
Reverse
Recovery
Body Diode Forward
Current
Current
di/dt
D.U.T. V_DS Waveform
Diode Recovery
dv/dt
V_DD
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
I_SD
* V_GS = 5V for Logic Level Devices
Fig. 18 - For N-Channel Power MOSFETs
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6
For technical questions within your region, please contact one of the following: Document Number: 94547
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Revision: 11-May-10