FA38SA50LCP Datasheet, PDF (5/9 Pages) Vishay Siliconix – Power MOSFET, 38 A

Power MOSFET, 38 A
FA38SA50LCP
Vishay Semiconductors
1
0.50
0.1
0.20
0.10
0.05
0.02
0.01 _0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
0.001
0.00001
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ= P DM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
t₁, Rectangular Pulse Duration (sec)
Fig. 13 - Maximum Effective Transient Thermal Impedance, Junction to Case
15 V
L
V_DS
Driver
R_G
20 V
t_p
D.U.T
I_AS
0.01 Ω
+
- ^VDD
A
Fig. 14 - Unclamped Inductive Test Circuit
V(BR)DSS
tp
I _AS
Fig. 15 - Unclamped Inductive Waveforms
1200
ID
TOP
17A
1000
24A
BOTTOM 38A
800
600
400
200
0
25
50
75
100
125
150
Starting T_J, Junction Temperature ( ^°C)
Fig. 16 - Maximum Avalanche Energy vs. Drain Current
Document Number: 94547 For technical questions within your region, please contact one of the following:
Revision: 11-May-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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