FA38SA50LCP Datasheet, PDF (2/9 Pages) Vishay Siliconix – Power MOSFET, 38 A

FA38SA50LCP
Vishay Semiconductors
Power MOSFET, 38 A
THERMAL RESISTANCE
PARAMETER
Junction to case
Case to sink, flat, greased surface
SYMBOL
R_thJC
R_thCS
TYP.
-
0.05
MAX.
0.25
-
UNITS
°C/W
ELECTRICAL CHARACTERISTCS (T_J = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to source breakdown voltage
Breakdown voltage temperature
coefficient
Static drain to source on-resistance
Gate threshold voltage
V_(BR)DSS
ΔV_(BR)DSS/ΔT_J
R_DS(on) ⁽¹⁾
V_GS(th)
V_GS = 0 V, I_D = 1.0 mA
Reference to 25 °C, I_D = 1 mA
V_GS = 10 V, I_D = 23 A
V_DS = V_GS, I_D = 250 μA
Forward transconductance
g_fs
V_DS = 25 V, I_D = 23 A
Drain to source leakage current
Gate to source forward leakage
Gate to source reverse leakage
V_DS = 500 V, V_GS = 0 V
I_DSS
V_DS = 400 V, V_GS = 0 V, T_J = 125 °C
V_GS = 20 V
I_GSS
V_GS = - 20 V
Total gate charge
Gate to source charge
Gate to drain ("Miller") charge
Q_g
I_D = 38 A
Q_gs
V_DS = 400 V
Q_gd
V_GS = 10 V; see fig. 6 and 13 ⁽¹⁾
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Internal source inductance
t_d(on)
t_r
t_d(off)
t_f
L_S
V_DD = 250 V
I_D = 38 A
R_g = 10 Ω (ιντερναλ)
R_D = 8 Ω, see fig. 10 ⁽¹⁾
Between lead, and center of die
contact
Input capacitance
Output capacitance
Reverse transfer capacitance
C_iss
C_oss
C_rss
V_GS = 0 V
V_DS = 25 V
f = 1.0 MHz, see fig. 5
Note
(1) _{Pulse width ≤ 300 μs, duty cycle ≤ 2 %}
MIN.
500
-
-
2.0
22
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.66
-
-
-
-
-
-
-
280
37
150
42
340
200
330
5.0
6900
1600
580
MAX. UNITS
-
V
-
V/°C
0.13
Ω
4.0
V
-
S
50
μA
500
200
nA
- 200
420
55
nC
220
-
-
ns
-
-
-
nH
-
-
pF
-
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX.
Continuous source current
(body diode)
Pulsed source current (body diode)
I_S
I_SM ⁽¹⁾
MOSFET symbol
showing the integral reverse
G
p-n junction diode.
D
-
-
S
-
38
-
150
Diode forward voltage
V_SD ⁽²⁾
T_J = 25 °C, I_S = 38 A, V_GS = 0 V
-
-
1.3
Reverse recovery time
Reverse recovery charge
t_rr
-
830 1300
T_J = 25 °C, I_F = 38 A; dI/dt = 100 A/μs ⁽²⁾
Q_rr
-
15
22
Forward turn-on time
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by L_S + L_D)
Notes
(1) _{Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)}
(2) _{Pulse width ≤ 300 μs, duty cycle ≤ 2 %}
UNITS
A
V
ns
μC
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Revision: 11-May-10