FA38SA50LCP Datasheet, PDF (4/9 Pages) Vishay Siliconix – Power MOSFET, 38 A

FA38SA50LCP
Vishay Semiconductors
Power MOSFET, 38 A
1000
100
T_J = 150°C
10
T_J = 25°C
1
0.1
0.2
V_GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source Drain Diode Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
100us
10
1ms
T_C = 25 °C
T_J = 150 °C
Single Pulse
1
1
10
10ms
100
1000
10000
V_DS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Current regulator
Same type as D.U.T.
12 V
50 KΩ
.2 µF
.3 µF
D.U.T.
+
- ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 10 - Gate Charge Test Circuit
V_DS
V_GS
R_G
R_D
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+
-
V_DD
Fig. 11 - Switching Time Test Circuit
10V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 9 - Basic Gate Charge Waveform
V_DS
90%
0%
GS
t_d(on) t_r
t_d(off) t_f
Fig. 12 - Switching Time Waveforms
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Revision: 11-May-10