FA38SA50LCP Datasheet, PDF (1/9 Pages) Vishay Siliconix – Power MOSFET, 38 A

Power MOSFET, 38 A
FA38SA50LCP
Vishay Semiconductors
SOT-227
PRODUCT SUMMARY
V_DSS
R_DS(on)
I_D
Type
Package
500 V
0.13 Ω
38 A
Modules - MOSFET
SOT-227
FEATURES
• Fully isolated package
• Easy to use and parallel
• Low on-resistance
• Dynamic dV/dt rating
• Fully avalanche rated
• Simple drive requirements
• Low drain to case capacitance
• Low internal inductance
• UL pending
• Compliant to RoHS directive 2002/95/EC
• Designed for industrial level
DESCRIPTION
Third Generation Power MOSFETs from Vishay HPP provide
the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-227 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 500 W. The low thermal resistance
of the SOT-227 contribute to its wide acceptance
throughout the industry.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL TEST CONDITIONS
Continuous drain current at V_GS 10 V
Pulsed drain current
Power dissipation
Linear derating factor
I_D
I_DM ⁽¹⁾
P_D
T_C = 25 °C
T_C = 100 °C
T_C = 25 °C
Gate to source voltage
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Peak diode recovery dV/dt
V_GS
E_AS ⁽²⁾
I_AR ⁽¹⁾
E_AR ⁽¹⁾
dV/dt ⁽³⁾
Operating junction and storage temperature range
Insulation withstand voltage (AC-RMS)
Mounting torque
T_J, T_Stg
V_ISO
M4 screw
Notes
(1) _{Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)}
(2) _{Starting TJ = 25 °C, L = 0.80 mH, Rg = 25 Ω, IAS = 38 A (see fig. 12)}
(3) _{ISD ≤ 38 A, dI/dt ≤ 410 A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150 °C}
MAX.
38
24
150
500
4.0
± 20
580
38
50
10
- 55 to + 150
2.5
1.3
UNITS
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
kV
Nm
Document Number: 94547 For technical questions within your region, please contact one of the following:
Revision: 11-May-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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