2N5196 Datasheet, PDF (6/6 Pages) Vishay Siliconix – Monolithic N-Channel JFET Duals

2N5196/5197/5198/5199
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance
vs. Gate-Source Voltage
10
f = 1 MHz
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
5
f = 1 MHz
8
4
6
V_DS = 0 V
4
5V
15 V
2
20 V
0
0
–4
–8
–12
–16
–20
V_GS – Gate-Source Voltage (V)
Equivalent Input Noise Voltage vs. Frequency
20
V_DS = 20 V
16
I_D @ 200 mA
12
3
V_DS = 0 V
5V
2
15 V
1
20 V
0
0
–4
–8
–12
–16
–20
V_GS – Gate-Source Voltage (V)
Output Conductance vs. Drain Current
2.5
V_GS(off) = –2 V
V_DS = 20 V
f = 1 kHz
2.0
T_A = –55_C
1.5
8
V_GS = 0 V
4
0
10
100
1k
10 k
f – Frequency (Hz)
100 k
Common-Source Forward Transconductance
vs. Drain Current
2.5
V_GS(off) = –2 V
2.0
V_DS = 20 V
f = 1 kHz
T_A = –55_C
1.5
25_C
1.0
0.5
125_C
0
0.01
0.1
1
I_D – Drain Current (mA)
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8-6
1.0
25_C
0.5
125_C
0
0.01
0.1
1
I_D – Drain Current (mA)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
1k
10
800
g_os
8
600
6
400
4
r_DS
200
0
0
r_DS @ I_D = 100 mA, V_GS = 0 V
g_os @ V_DS = 20 V, V_GS = 0 V, f = 1 kHz
–1
–2
–3
–4
V_GS(off) – Gate-Source Cutoff Voltage (V)
2
0
–5
Document Number: 70252
S-04031—Rev. D, 04-Jun-01