2N5196 Datasheet, PDF (5/6 Pages) Vishay Siliconix – Monolithic N-Channel JFET Duals

2N5196/5197/5198/5199
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
5
V_GS(off) = –2 V
V_DS = 20 V
Gate-Source Differential Voltage
vs. Drain Current
100
V_DG = 20 V
T_A = 25_C
4
3
T_A = –55_C
25_C
2
2N5199
10
2N5196
1 125_C
0
0
–0.5
–1.0
–1.5
–2.0
V_GS – Gate-Source Voltage (V)
–2.5
Voltage Differential with Temperature
vs. Drain Current
100
V_DG = 20 V
DT_A = 25 to 125_C
DT_A = –55 to 25_C
2N5199
10
2N5196
1
0.01
0.1
1
I_D – Drain Current (mA)
Circuit Voltage Gain vs. Drain Current
100
1
0.01
0.1
1
I_D – Drain Current (mA)
Common Mode Rejection Ratio
vs. Drain Current
130
CMRR = 20 log
DV_DG
120
D _{VGS1 – VGS2}
110
DV_DG = 10 – 20 V
100
5 – 10 V
90
80
0.01
0.1
1
I_D – Drain Current (mA)
On-Resistance vs. Drain Current
1k
80
60
V_GS(off) = –3 V
40
A_V + ₁
g_fs R_L
) R_Lg_os
V_GS(off) = –2 V
20 ^{Assume VDD = 15 V, VDS = 5 V}
R_L
+
10 V
I_D
0
0.01
0.1
1
I_D – Drain Current (mA)
Document Number: 70252
S-04031—Rev. D, 04-Jun-01
800
600
400
200
0
0.01
V_GS(off) = –2 V
V_GS(off) = –3 V
0.1
1
I_D – Drain Current (mA)
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