2N5196 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Monolithic N-Channel JFET Duals

2N5196/5197/5198/5199
Vishay Siliconix
Monolithic N-Channel JFET Duals
PRODUCT SUMMARY
Part Number
2N5196
2N5197
2N5198
2N5199
V_GS(off) (V)
–0.7 to –4
–0.7 to –4
–0.7 to –4
–0.7 to –4
V_(BR)GSS Min (V)
–50
–50
–50
–50
g_fs Min (mS)
1
1
1
1
I_G Max (pA)
–15
–15
–15
–15
jV_GS1 – V_GS2j Max (mV)
5
5
10
15
FEATURES
D Monolithic Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 5 pA
D Low Noise
D High CMRR: 100 dB
BENEFITS
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time
Accuracy
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signal
APPLICATIONS
D Wideband Differential Amps
D High-Speed, Temp-Compensated,
Single-Ended Input Amps
D High Speed Comparators
D Impedance Converters
DESCRIPTION
The 2N5196/5197/5198/5199 JFET duals are designed for
high-performance differential amplification for a wide range of
precision test instrumentation applications. This series
features tightly matched specs, low gate leakage for accuracy,
and wide dynamic range with I_G guaranteed at V_DG = 20 V.
The hermetically-sealed TO-71 package is available with full
military processing (see Military Information and the
2N5545/5546/5547JANTX/JANTXV data sheet).
For similar products see the low-noise U/SST401 series, the
high-gain 2N5911/5912, and the low-leakage U421/423 data
sheets.
TO-71
S₁
1
D₁
2
G₂
6
5
D₂
ABSOLUTE MAXIMUM RATINGS
3
G₁
4
S₂
Top View
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (¹/₁₆” from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Document Number: 70252
S-04031—Rev. D, 04-Jun-01
Power Dissipation :
Per Side^a . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
Total^b . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 2 mW/_C above 85_C
b. Derate 4 mW/_C above 85_C
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