2N5196 Datasheet, PDF (4/6 Pages) Vishay Siliconix – Monolithic N-Channel JFET Duals

2N5196/5197/5198/5199
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
5
3
100 nA
Gate Leakage Current
4
2.6
I_DSS
g_fs
3
2.2
2
1.8
1
I_DSS @ V_DS = 15 V, V_GS = 0 V
g_fs @ V_DG = 15 V, V_GS = 0 V
1.4
f = 1 kHz
10 nA
1 nA
100 pA
I_G @ I_D = 200 mA
T_A = 125_C
I_GSS @ 125_C
200 mA
50 mA
50 mA
10 pA
1 pA
T_A = 25_C
I_GSS @ 25_C
0
1
0
–1
–2
–3
–4
–5
V_GS(off) – Gate-Source Cutoff Voltage (V)
0.1 pA
0
10
20
30
40
50
V_DG – Drain-Gate Voltage (V)
Output Characteristics
5
V_GS(off) = –2 V
4
3
2
1
0
0
2
1.6
1.2
0.8
0.4
0
0
V_GS = 0 V
–0.2 V
–0.4 V
–0.6 V
–1.4 V
4
8
12
16
V_DS – Drain-Source Voltage (V)
–0.8 V
–1.0 V
–1.2 V
20
Output Characteristics
V_GS(off) = –2 V
V_GS = 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
–1.4 V
–1.6 V
0.2
0.4
0.6
0.8
1
V_DS – Drain-Source Voltage (V)
Output Characteristics
5
V_GS(off) = –3 V
V_GS = 0 V
4
–0.3 V
–0.6 V
3
–0.9 V
2
–1.2 V
–1.5 V
1
–1.8 V
–2.1 V
0
0
2.5
2.0
1.5
1.0
–2.4 V
4
8
12
16
20
V_DS – Drain-Source Voltage (V)
Output Characteristics
V_GS(off) = –3 V
V_GS = 0 V _{–0.3 V}
–0.6 V
–0.9 V
–1.2 V
–1.5 V
–1.8 V
0.5
–2.1 V
0
0
0.2
0.4
0.6
0.8
V_DS – Drain-Source Voltage (V)
–2.4 V
1
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8-4
Document Number: 70252
S-04031—Rev. D, 04-Jun-01