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2N5196 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Monolithic N-Channel JFET Duals
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2N5196/5197/5198/5199
Vishay Siliconix
SPECIFICATIONS FOR 2N5196 AND 2N5197 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5196
2N5197
Parameter
Symbol
Test Conditions
Typa Min Max Min Max
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Gate-Source Voltage
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
VGS
gfs
gos
gfs
gos
Ciss
Crss
IG = –1 mA, VDS = 0 V
VDS = 20 V, ID = 1 nA
VDS = 20 V, VGS = 0 V
VGS = –30 V, VDS = 0 V
TA = 150_C
VDG = 20 V, ID = 200 mA
TA = 125_C
VDG = 20 V, ID = 200 mA
–57 –50
–50
–2 –0.7 –4 –0.7 –4
3
0.7
7
0.7
7
–10
–25
–25
–20
–50
–50
–5
–15
–15
–0.8
–15
–15
–1.5 –0.2 –3.8 –0.2 –3.8
VDS = 20 V, VGS = 0 V
f = 1 kHz
VDS = 20 V, ID = 200 mA
f = 1 kHz
VDS = 20 V, VGS = 0 V
f = 1 MHz
2.5
1
4
1
4
2
50
50
0.8 0.7 1.6 0.7 1.6
1
4
4
3
6
6
1
2
2
Equivalent Input Noise Voltage
Noise Figure
Matching
en
VDS = 20 V, VGS = 0 V, f = 1 kHz
9
20
20
NF
VDS = 20 V, VGS = 0 V
f = 100 Hz, RG = 10 MW
0.5
0.5
Unit
V
mA
pA
nA
pA
nA
V
mS
mS
mS
mS
pF
nV⁄
√Hz
dB
Differential Gate-Source Voltage
|VGS1–VGS2|
VDG = 20 V, ID = 200 mA
5
5
mV
Gate-Source Voltage Differential
Change with Temperature
D|VGS1–VGS2|
DT
VDG = 20 V, ID = 200 mA
TA = –55 to 125_C
5
10 mV/_C
Saturation Drain Current Ratio
Transconductance Ratio
Differential Output Conductance
IDSS1
IDSS2
gfs1
gfs2
|gos1–gos2|
VDS = 20 V, VGS = 0 V
VDS = 20 V, ID = 200 mA
f = 1 kHz
0.98 0.95 1 0.95 1
0.99 0.97 1 0.97 1
0.1
1
1
mS
Differential Gate Current
|IG1–IG2|
VDG = 20 V, ID = 200 mA , TA = 125_C
0.1
5
Common Mode Rejection Ratioc
CMRR
VDG = 10 to 20 V, ID = 200 mA
100
5
nA
dB
www.vishay.com
8-2
Document Number: 70252
S-04031—Rev. D, 04-Jun-01
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