VS-GT50TP60N Datasheet, PDF (5/7 Pages) Vishay Siliconix – Half Bridge IGBT Power Module, 600 V, 50 A

www.vishay.com
10
1
VS-GT50TP60N
Vishay Semiconductors
Diode
0.1
0.01
0.001
CIRCUIT CONFIGURATION
i:
1
2
3
4
r_i [K/W]: 0.0612 0.3366 0.3264 0.2958
τ_i [s]:
0.01 0.02 0.05 0.1
0.01
0.1
1
10
t (s)
Fig. 10 - Diode Transient Thermal Impedance
6
7
1
2
3
5
4
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95524
Revision: 11-Jun-15
5
Document Number: 94666
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000