VS-GT50TP60N Datasheet, PDF (4/7 Pages) Vishay Siliconix – Half Bridge IGBT Power Module, 600 V, 50 A

www.vishay.com
1
IGBT
VS-GT50TP60N
Vishay Semiconductors
0.1
0.01
0.001
i:
1
2
3
4
r_i [K/W]: 0.0432 0.2376 0.2304 0.2088
τ_i [s]:
0.01 0.02 0.05 0.1
0.01
0.1
1
10
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
100
90
80
70
60
50
40
30
125 °C
20
25 °C
10
0
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
V_F (V)
Fig. 7 - Diode Forward Characteristics
1.8
1.6
V_CC = 300 V
R_G = 3.3 Ω
1.4
V_GE = - 15 V
1.2
T_J = 125 °C
1.0
E_rec
0.8
0.6
0.4
0.2
0
0 10 20 30 40 50 60 70 80 90 100
I_F (A)
Fig. 8 - Diode Switching Loss vs. I_F
1.2
1.1
1.0
E_rec
0.9
0.8
V_CC = 300 V
I_F = 50 A
0.7
V_GE = - 15 V
T_J = 125 °C
0.6
0
5 10 15 20 25 30 35
R_G (Ω)
Fig. 9 - Diode Switching Loss vs. R_G
Revision: 11-Jun-15
4
Document Number: 94666
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000