VS-GT50TP60N Datasheet, PDF (3/7 Pages) Vishay Siliconix – Half Bridge IGBT Power Module, 600 V, 50 A

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100
90
V_GE = 15 V
80
70
25 °C
60
50
40
175 °C
30
20
10
0
0 0.5
1 1.5
2 2.5
3 3.5
V_CE (V)
Fig. 1 - IGBT Typical Output Characteristics
1.8
1.6
V_CC = 300 V
R_G = 3.3 Ω
1.4
V_GE = ± 15 V
1.2
T_J = 125 °C
1.0
0.8
0.6
E_off
0.4
0.2
E_on
0
0 10 20 30 40 50 60 70 80 90 100
I_C (A)
Fig. 2 - IGBT Transfer Characteristics
VS-GT50TP60N
Vishay Semiconductors
100
90
80
70
60
50
40
30
20
10
0
4
V_CE (V) = 50 V
175 °C
25 °C
5
6
7
8
9 10 11
V_GE (V)
Fig. 3 - IGBT Switching Loss vs. I_C
2.4
2.2 V_CC = 300 V
2.0 ^IC ^{= 50 A}
1.8
V_GE = ± 15 V
1.6
T_J = 125 °C
1.4
1.2
E_on
1.0
0.8
0.6
E_off
0.4
0.2
0
0
5 10 15 20 25 30 35
R_G (Ω)
Fig. 4 - IGBT Switching Loss vs. R_G
120
Module
100
80
60
40
R_G = 3.3 Ω
20
V_GE = ± 15 V
T_J = 125 °C
0
0 100 200 300 400 500 600 700
V_CE (V)
Fig. 5 - RBSOA
Revision: 11-Jun-15
3
Document Number: 94666
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