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VS-GT50TP60N Datasheet, PDF (2/7 Pages) Vishay Siliconix – Half Bridge IGBT Power Module, 600 V, 50 A
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VS-GT50TP60N
Vishay Semiconductors
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
SC data
Stray inductance
Module lead resistance, terminal to chip
SYMBOL
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
Coes
Cres
ISC
LCE
RCC’+EE’
TEST CONDITIONS
VCC = 300 V, IC = 50 A, Rg = 3.3 ,
VGE = ± 15 V, TJ = 25 °C
VCC = 300 V, IC = 50 A, Rg = 3.3 ,
VGE = ± 15 V, TJ = 125 °C
VGE = 0 V, VCE = 30 V, f = 1.0 MHz
tp  5 μs, VGE = 15 V, TJ = 125 °C, 
VCC = 360 V, VCEM  600 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
58
31
80
100
0.41
0.42
64
37
90
117
0.69
0.69
3.03
0.25
0.09
450
-
0.75
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
ns
mJ
ns
mJ
nF
-
A
30
nH
-
m
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Forward voltage
Reverse recovery charge
Peak reverse recovery current
Reverse recovery energy
VF
IF = 50 A
TJ = 25 °C
TJ = 125 °C
Qrr
TJ = 25 °C
TJ = 125 °C
Irr
IF = 50 A, VR = 300 V,
RG = 3.3 
VGE = -15 V
TJ = 25 °C
TJ = 125 °C
Erec
TJ = 25 °C
TJ = 125 °C
MIN.
-
-
-
-
-
-
-
-
TYP.
1.35
1.37
2.3
4.3
33
58
0.56
1.11
MAX.
1.75
-
-
-
-
-
-
-
UNITS
V
μC
A
mJ
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
TJ
Storage temperature range
TStg
Junction to case
per ½ module
IGBT
Diode
RthJC
Case to sink (Conductive grease applied) RthCS
Mounting torque
Power terminal screw: M5
Mounting screw: M6
Weight
Weight of module
MIN. TYP. MAX. UNITS
-
-
175 °C
-40
-
125 °C
-
-
0.72
-
-
1.02 K/W
-
0.05
-
2.5 to 5.0
Nm
3.0 to 5.0
-
150
-
g
Revision: 11-Jun-15
2
Document Number: 94666
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000