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VS-GT50TP60N Datasheet, PDF (1/7 Pages) Vishay Siliconix – Half Bridge IGBT Power Module, 600 V, 50 A
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VS-GT50TP60N
Vishay Semiconductors
Half Bridge IGBT Power Module, 600 V, 50 A
INT-A-PAK
FEATURES
• Low VCE(on) trench IGBT technology
• 5 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912 
PRODUCT SUMMARY
VCES
IC at TC = 80 °C
VCE(on) (typical)
at IC = 50 A, 25 °C
Speed
Package
Circuit
600 V
50 A
1.65 V
8 kHz to 30 kHz
INT-A-PAK
Half bridge
TYPICAL APPLICATIONS
• UPS (Uninterruptable Power Supply)
• Electronic welders
• Switching mode power supplies
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
Gate to emitter voltage
Collector current
Pulsed collector current
Diode continuous forward current
Diode maximum forward current
Maximum power dissipation
Short circuit withstand time
RMS isolation voltage
VCES
VGES
IC
ICM (1)
IF
IFM (1)
PD
tSC
VISOL
TC = 25 °C
TC = 80 °C
tp = 1 ms
TC = 80 °C
tp = 1 ms
TJ = 175 °C
TC = 125 °C
f = 50 Hz, t = 1 min
Note
(1) Repetitive rating: pulse width limited by maximum junction temperature.
MAX.
600
± 20
85
50
100
50
100
208
5
4000
UNITS
V
A
W
μs
V
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate to emitter threshold voltage
Collector cut-off current
Gate to emitter leakage current
V(BR)CES
VCE(on)
VGE(th)
ICES
IGES
TJ = 25 °C
VGE = 15 V, IC = 50 A, TJ = 25 °C
VGE = 15 V, IC = 50 A, TJ = 175 °C
VCE = VGE, IC = 1.4 mA, TJ = 25 °C
VCE = VCES, VGE = 0 V, TJ = 25 °C
VGE = VGES, VCE = 0 V, TJ = 25 °C
MIN.
600
-
-
4.0
-
-
TYP.
-
1.65
2.05
4.9
-
-
MAX.
-
2.10
-
6.5
1.0
400
UNITS
V
mA
nA
Revision: 11-Jun-15
1
Document Number: 94666
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000