VS-GB75SA120UP Datasheet, PDF (5/7 Pages) Vishay Siliconix – NPT Generation V IGBT technology

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VS-GB75SA120UP
Vishay Semiconductors
50 V
1000 V
1
L
V_C *
D.U.T.
2
* Driver same type as D.U.T.; V_C = 80 % of V_ce(max)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
Fig. 12 - Clamped Inductive Load Test Circuit
R = ^VCC
ICM
D.U.T.
R_g
+
- _VCC
Fig. 13 - Pulsed Collector Current Test Circuit
Diode clamp/
D.U.T.
-+
-5V
R_g
L
D.U.T./
driver
+
-
V_CC
Fig. 14 - Switching Loss Test Circuit
1
2
3
V_C
90 %
10 %
90 %
t_d(off)
10 %
5%
I_C
t_d(on)
t_r
t_f
E_on
E_off
E_ts = (E_on + E_off)
Fig. 15 - Switching Loss Waveforms Test Circuit
t = 5 µs
Revision: 26-Jul-13
5
Document Number: 93124
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