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VS-GB75SA120UP Datasheet, PDF (1/7 Pages) Vishay Siliconix – NPT Generation V IGBT technology
Not Available for New Designs, Use VS-GB90SA120U
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VS-GB75SA120UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
SOT-227
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 75 A, 25 °C
Package
1200 V
75 A at 95 °C
3.3 V
SOT-227
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
• Positive VCE(on) temperature coefficient
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
ICM
Clamped inductive load current
ILM
Gate to emitter voltage
VGE
Power dissipation
PD
Isolation voltage
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
1200
131
89
200
200
± 20
658
369
2500
UNITS
V
A
V
W
V
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage VBR(CES) VGE = 0 V, IC = 250 μA
Collector to emitter voltage
VCE(on)
VGE = 15 V, IC = 75 A
VGE = 15 V, IC = 75 A, TJ = 125 °C
Gate threshold voltage
Temperature coefficient of
threshold voltage
VGE(th)
VCE = VGE, IC = 250 μA
VGE(th)/TJ VCE = VGE, IC = 1 mA (25 °C to 125 °C)
Collector to emitter leakage current
Gate to emitter leakage current
VGE = 0 V, VCE = 1200 V
ICES
VGE = 0 V, VCE = 1200 V, TJ = 150 °C
IGES
VGE = ± 20 V
MIN.
1200
-
-
4
-
-
-
-
TYP.
-
3.3
3.6
5
- 12
3
4
-
MAX.
-
3.8
3.9
6
-
250
20
± 200
UNITS
V
mV/°C
μA
mA
nA
Revision: 26-Jul-13
1
Document Number: 93124
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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