VS-GB75SA120UP Datasheet, PDF (3/7 Pages) Vishay Siliconix – NPT Generation V IGBT technology

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VS-GB75SA120UP
Vishay Semiconductors
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140
93124_01 I_C - Continuous Collector Current (A)
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
10
1
T_J = 125 °C
0.1
0.01
0.001
T_J = 25 °C
0.0001
0
200 400 600 800 1000 1200
93124_04
V_CES (V)
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
1000
100
10
1
10
93124_02
100
1000
10 000
V_CE (V)
Fig. 2 - IGBT Reverse Bias SOA
T_J = 150 °C, V_GE = 15 V
200
150
T_J = 25 °C
100
T_J = 125 °C
50
0
0
1
2
3
4
5
6
93124_03
V_CE (V)
Fig. 3 - Typical IGBT Collector Current Characteristics
6.0
5.5
T_J = 25 °C
5.0
4.5
T_J = 125 °C
4.0
3.5
3.0
0.0002
0.0004
0.0006
0.0008
0.001
93124_05
I_C (mA)
Fig. 5 - Typical IGBT Threshold Voltage
4.5
4.0
100 A
75 A
3.5
3.0
2.5
27 A
2.0
25
50
75
100
125
150
93124_06
T_J (°C)
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, V_GE = 15 V
Revision: 26-Jul-13
3
Document Number: 93124
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