VS-GB75SA120UP Datasheet, PDF (4/7 Pages) Vishay Siliconix – NPT Generation V IGBT technology

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VS-GB75SA120UP
Vishay Semiconductors
4.0
3.5
3.0
2.5
E_off
2.0
1.5
E_on
1.0
0.5
0
10 20 30 40 50 60 70 80
93124_07
I_C (A)
Fig. 7 - Typical IGBT Energy Loss vs. I_C
T_J = 125 °C, L = 500 μH, V_CC = 600 V,
R_g = 5 , V_GE = 15 V
1000
100
t_d(off)
t_d(on)
t_f
t_r
14
12
E_on
10
8
E_off
6
4
2
0
0
10
20
30
40
50
93124_09
R_G (Ω)
Fig. 9 - Typical IGBT Energy Loss vs. R_g
T_J = 125 °C, I_C = 75 A, L = 500 μH,
V_CC = 600 V, V_GE = 15 V
10 000
1000
100
t_d(on)
t_d(off)
t_f
t_r
10
0
20
40
60
80
93124_08
I_C (A)
Fig. 8 - Typical IGBT Switching Time vs. I_C
T_J = 125 °C, L = 500 μH, V_CC = 600 V,
R_g = 5 , V_GE = 15 V
1
10
0
10
20
30
40
50
93124_10
R_G (Ω)
Fig. 10 - Typical IGBT Switching Time vs. R_g
T_J = 125 °C, L = 500 μH, V_CC = 600 V,
R_g = 5 , V_GE = 15 V
0.1
0.01
0.001
Single pulse
(thermal response)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
93124_11
Rectangular Pulse Duration (t₁)
Fig. 11 - Maximum Thermal Impedance Z_thJC Characteristics
Revision: 26-Jul-13
4
Document Number: 93124
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