VS-GB75SA120UP Datasheet, PDF (2/7 Pages) Vishay Siliconix – NPT Generation V IGBT technology

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VS-GB75SA120UP
Vishay Semiconductors
SWITCHING CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Q_g
Q_ge
Q_gc
E_on
E_off
E_tot
E_on
E_off
E_tot
t_d(on)
t_r
t_d(off)
t_f
RBSOA
I_C = 50 A, V_CC = 600 V, V_GE = 15 V
I_C = 75 A, V_CC = 600 V,
V_GE = 15 V, R_g = 5 
L = 500 μH
I_C = 75 A, V_CC = 600 V,
V_GE = 15 V, R_g = 5  
L = 500 μH, T_J = 125 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
T_J = 150 °C, I_C = 200 A, R_g = 22 
V_GE = 15 V to 0 V, V_CC = 900 V,
V_P = 1200 V, L = 500 μH
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
690
65
250
1.53
1.76
3.29
2.49
3.45
5.94
281
45
300
126
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
UNITS
nC
mJ
ns
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction and storage temperaure range
Thermal resistance, junction to case
Thermal resistance case to heatsink
Weight
T_J, T_STG
R_thJC
R_thCS
Flat, greased surface
Mounting torque
Case style
MIN.
- 40
-
-
-
-
TYP. MAX.
-
150
-
0.19
0.05
-
30
-
-
1.3
SOT-227
UNITS
°C/W
g
Nm
Revision: 26-Jul-13
2
Document Number: 93124
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