VS-GB200TH120U Datasheet, PDF (5/7 Pages) Vishay Siliconix – Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A

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VS-GB200TH120U
Vishay Semiconductors
16
14
12
10
E_rec
8
6
4
V_CC = 600 V
I_C = 200 A
2
V_GE = - 15 V
T_J = 125 °C
0
0
10
20
30
40
50
R_g (Ω)
Fig. 9 - Diode Switching Loss vs. Gate Resistance
1
Diode
0.1
0.01
0.001
0.001
0.01
0.1
1
10
t (s)
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
6
7
1
2
3
5
4
Dimensions
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www.vishay.com/doc?95525
Revision: 12-Jun-15
5
Document Number: 94754
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