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| VS-GB200TH120U Datasheet, PDF (2/7 Pages) Vishay Siliconix – Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A | |||
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www.vishay.com
VS-GB200TH120U
Vishay Semiconductors
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate to emitter threshold voltage
Collector cut-off current
Gate to emitter leakage current
V(BR)CES
VCE(on)
VGE(th)
ICES
IGES
TJ = 25 °C
VGE = 15 V, IC = 200 A, TJ = 25 °C
VGE = 15 V, IC = 200 A, TJ = 125 °C
VCE = VGE, IC = 2.0 mA, TJ = 25 °C
VCE = VCES, VGE = 0 V, TJ = 25 °C
VGE = VGES, VCE = 0 V, TJ = 25 °C
MIN.
1200
-
-
4.4
-
-
TYP.
-
3.10
3.45
4.9
-
-
MAX. UNITS
-
3.60
V
-
6.0
5.0 mA
400 nA
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
SC data
Internal gate resistance
Stray inductance
Module lead resistance, terminal to chip
SYMBOL
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
Coes
Cres
ISC
Rgint
LCE
RCCâ+EEâ
TEST CONDITIONS
VCC = 600 V, IC = 200 A, Rg = 4.7 ï,ï
VGE = ± 15 V, TJ = 25 °C
VCC = 600 V, IC = 200 A, Rg = 4.7 ï,ï
VGE = ± 15 V, TJ = 125 °C
VGE = 0 V, VCE = 30 V, f = 1.0 MHz
tsc ï£ 10 μs, VGE = 15 V, TJ = 125 °C, ï
VCC = 600 V, VCEM ï£ 1200 V
TC = 25 °C
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
577
120
540
123
16.3
12.0
609
121
574
132
22.0
16.2
16.9
1.51
0.61
1800
2.0
-
0.32
MAX. UNITS
-
-
ns
-
-
-
mJ
-
-
-
ns
-
-
-
mJ
-
-
-
nF
-
-
A
-
ï
18
nH
-
mï
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Diode forward voltage
Diode reverse recovery charge
Diode peak reverse recovery current
Diode reverse recovery energy
VF
IF = 200 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
Qrr
TJ = 125 °C
Irr
IF = 200 A, VR = 600 V,ï
dI/dt = -1800 A/μs,ï
TJ = 25 °C
VGE = -15 V
TJ = 125 °C
TJ = 25 °C
Erec
TJ = 125 °C
MIN.
-
-
-
-
-
-
-
-
TYP.
1.82
1.95
13.1
26.1
123
172
7.0
12.9
MAX. UNITS
2.25
V
-
-
μC
-
-
A
-
-
mJ
-
Revision: 12-Jun-15
2
Document Number: 94754
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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