VS-GB200TH120U Datasheet, PDF (4/7 Pages) Vishay Siliconix – Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A

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VS-GB200TH120U
Vishay Semiconductors
500
450
400
350
300
250
200
150
100
50
0
0
I_C, Module
R_g = 4.7 Ω
V_GE = 15 V
T_J = 125 °C
300
600
900
V_CE (V)
Fig. 5 - RBSOA
1200
1500
1
0.1
IGBT
0.01
0.001
0.0001
0.001
0.01
0.1
1
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
400
350
300
250
25 °C
200
125 °C
150
100
50
0
0
0.5 1
1.5
2
2.5
3
V_F (V)
Fig. 7 - Diode Typical Forward Characteristics
24
20
16
E_rec
12
8
V_CC = 600 V
R_g = 4.7 Ω
4
V_GE = - 15 V
T_J = 125 °C
0
0
80
160
240 320
400
I_C (A)
Fig. 8 - Diode Switching Loss vs. I_F
Revision: 12-Jun-15
4
Document Number: 94754
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