VS-GB200TH120U Datasheet, PDF (3/7 Pages) Vishay Siliconix – Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A

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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Operating junction temperature range
T_J
Storage temperature range
T_STG
Junction to case
IGBT
Diode
R_thJC
Case to sink
R_thCS
Conductive grease applied
Mounting torque
Power terminal screw: M5
Mounting screw: M6
Weight
VS-GB200TH120U
Vishay Semiconductors
MIN. TYP. MAX. UNITS
-
-
150
°C
-40
-
125
-
- 0.095
-
- 0.140 K/W
- 0.035 -
2.5 to 5.0
Nm
3.0 to 6.0
300
g
400
V_GE = 15 V
350
300
250
25 °C
200
150
125 °C
100
50
0
0
1
2
3
4
5
V_CE (V)
Fig. 1 - IGBT Typical Output Characteristics
400
350
V_CE = 20 V
300
250
125 °C
200
150
25 °C
100
50
0
4 5 6 7 8 9 10 11 12
V_GE (V)
Fig. 2 - IGBT Typical Transfer Characteristics
80
70
V_CC = 600 V
R_g = 4.7 Ω
60
V_GE = ± 15 V
T_J = 125 °C
50
40
E_on
30
20
E_off
10
0
0
100
200
300
400
I_C (A)
Fig. 3 - IGBT Switching Loss vs. I_C
150
V_CC = 600 V
120 ^IC ^{= 200 A}
V_GE = ± 15 V
T_J = 125 °C
90
E_on
60
E_off
30
0
0
10
20
30
40
50
R_g (Ω)
Fig. 4 - IGBT Switching Loss vs. R_g
Revision: 12-Jun-15
3
Document Number: 94754
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