VS-GB200TH120U Datasheet, PDF (1/7 Pages) Vishay Siliconix – Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A

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VS-GB200TH120U
Vishay Semiconductors
Molding Type Module IGBT,
2-in-1 Package, 1200 V and 200 A
Double INT-A-PAK
PRODUCT SUMMARY
V_CES
I_C at T_C = 80 °C
V_CE(on) (typical)
at I_C = 200 A, 25 °C
Speed
Package
Circuit
1200 V
200 A
3.10 V
8 kHz to 30 kHz
Double INT-A-PAK
Half bridge
FEATURES
• 10 μs short circuit capability
• V_CE(on) with positive temperature coefficient
• Maximum junction temperature 150 °C
• Low switching losses
• Rugged with ultrafast performance
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Switching mode power supplies
• Inductive heating
• Electronic welder
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as electronic welder and inductive
heating.
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
Gate to emitter voltage
Collector current
Pulsed collector current
Diode continuous forward current
Diode maximum forward current
V_CES
V_GES
I_C
I_CM ⁽¹⁾
I_F
I_FM
T_C = 25 °C
T_C = 80 °C
t_p = 1 ms
T_C = 80 °C
t_p = 1 ms
Maximum power dissipation
P_D
T_J = 150 °C
Short circuit withstand time
t_SC
T_J = 125 °C
RMS isolation voltage
V_ISOL
f = 50 Hz, t = 1 min
Note
(1) _{Repetitive rating: pulse width limited by maximum junction temperature.}
MAX.
1200
± 20
330
200
400
200
400
1316
10
2500
UNITS
V
A
W
μs
V
Revision: 12-Jun-15
1
Document Number: 94754
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000