VS-GB100TH120U Datasheet, PDF (5/8 Pages) Vishay Siliconix – Molding Type Module IGBT, 2 in 1 Package, 1200 V and 100 A

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200
175
150
T_J = 25 °C
125
100
75
T_J = 125 °C
50
25
0
0
0.5 1.0 1.5 2.0 2.5 3.0
V_F (V)
Fig. 7 - Diode Typical Forward Characteristics
VS-GB100TH120U
Vishay Semiconductors
12
V_CC = 600 V
10
R_g = 5.6 Ω
V_GE = ± 15 V
T_J = 125 °C
8
6
E_rec
4
2
0
0
50
100
150
200
I_F (A)
Fig. 8 - Diode Switching Loss vs. I_F
8
7
6
E_rec
5
4
3
V_CC = 600 V
2
I_F = 100 A
1
V_GE = ± 15 V
T_J = 125 °C
0
0
10
20
30
40
50
60
R_g (Ω)
Fig. 9 - Diode Switching Loss vs. R_g
10⁰
DIODE
10^-1
10^-2
10^-3
10^-3
10^-2
10^-1
10^-0
10¹
t (s)
Fig. 10 - Diode Transient Thermal Impedance
Revision: 10-Jun-15
5
Document Number: 93413
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