VS-GB100TH120U Datasheet, PDF (3/8 Pages) Vishay Siliconix – Molding Type Module IGBT, 2 in 1 Package, 1200 V and 100 A

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VS-GB100TH120U
Vishay Semiconductors
DIODE ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Diode forward voltage
V_F
I_F = 100 A
T_C = 25 °C
T_C = 125 °C
Diode reverse recovery charge
Q_rr
T_C = 25 °C
T_C = 125 °C
I_F = 100 A, V_R = 600 V, _{TC = 25 °C}
Diode peak reverse recovery current
I_rr
dI_F/dt = -1900 A/μs,
V_GE = -15 V
T_C = 125 °C
Diode reverse recovery energy
E_rec
T_C = 25 °C
T_C = 125 °C
MIN.
-
-
-
-
-
-
-
-
TYP.
1.82
1.95
5.4
11.2
81
101
3.54
6.57
MAX. UNITS
2.22
V
-
-
μC
-
-
A
-
-
mJ
-
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Operating junction temperature range
Storage temperature range
Junction to case
IGBT
Diode
T_J
T_Stg
R_thJC
Case to sink
Mounting torque
R_thCS
Conductive grease applied
Power terminal screw: M6
Mounting screw: M6
Weight
MIN. TYP. MAX. UNITS
-40
-
150
°C
-40
-
125
-
- 0.141
-
- 0.225 °C/W
- 0.035 -
2.5 to 5.0
Nm
3.0 to 6.0
300
g
200
175
V_GE = 15 V
150
T_J = 25 °C
125
100
75
T_J = 125 °C
50
25
0
0
1.0
2.0
3.0
4.0
5.0
V_CE (V)
Fig. 1 - IGBT Typical Output Characteristics
200
180
160
140
120
T_J = 125 °C
100
80
60
40
T_J = 25 °C
20
0
5
6
7
8
9
10
11
V_GE (V)
Fig. 2 - IGBT Typical Transfer Characteristics
Revision: 10-Jun-15
3
Document Number: 93413
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