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VS-GB100TH120U Datasheet, PDF (2/8 Pages) Vishay Siliconix – Molding Type Module IGBT, 2 in 1 Package, 1200 V and 100 A
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VS-GB100TH120U
Vishay Semiconductors
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
V(BR)CES
TJ = 25 °C
Collector to emitter voltage
VCE(on)
VGE = 15 V, IC = 100 A, TJ = 25 °C
VGE = 15 V, IC = 100 A, TJ = 125 °C
Gate to emitter threshold voltage
VGE(th)
VCE = VGE, IC = 1 mA, TJ = 25 °C
Zero gate voltage collector current
ICES
VCE = VCES, VGE = 0 V, TJ = 25 °C
Gate to emitter leakage current
IGES
VGE = VGES, VCE = 0 V, TJ = 25 °C
MIN.
1200
-
-
4.4
-
-
TYP.
-
3.10
3.45
4.9
-
-
MAX. UNITS
-
3.60
V
-
6.0
5.0 mA
400 nA
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Short circuit withstand time
Input capacitance
Output capacitance
Reverse transfer capacitance
SC data
Internal gate resistance
Stray inductance
Module lead resistance, terminal to chip
SYMBOL
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
tSC
Cies
Coes
Cres
ISC
RGINT
LCE
RCC’+EE’
TEST CONDITIONS
MIN.
-
-
VCC = 600 V, IC = 100 A, Rg = 5.6 ,
-
VGE = ± 15 V, L = 200 nH, TJ = 25 °C
-
-
-
-
-
VCC = 600 V, IC = 100 A, Rg = 5.6 ,
-
VGE = ± 15 V, L = 200 nH, TJ = 125 °C -
-
-
TJ = 125 °C
-
-
VGE = 0 V, VCE = 20 V, f = 1.0 MHz
-
-
tp  10 μs, VGE = ± 15 V, VCC = 600 V,
VCEM  1200 V, TJ = 25 °C
-
-
-
-
TYP.
300
64
340
105
4.76
4.25
320
65
350
132
7.20
5.50
-
8.45
0.76
0.31
900
2.4
-
0.32
MAX. UNITS
-
-
ns
-
-
-
mJ
-
-
-
ns
-
-
-
mJ
-
10
μs
-
-
nF
-
-
-

18
nH
-
m
Revision: 10-Jun-15
2
Document Number: 93413
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