VS-GB100TH120U Datasheet, PDF (1/8 Pages) Vishay Siliconix – Molding Type Module IGBT, 2 in 1 Package, 1200 V and 100 A

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VS-GB100TH120U
Vishay Semiconductors
Molding Type Module IGBT,
2 in 1 Package, 1200 V and 100 A
Double INT-A-PAK
PRODUCT SUMMARY
V_CES
I_C at T_C = 80 °C
V_CE(on) (typical)
at I_C = 100 A, 25 °C
Speed
Package
Circuit
1200 V
100 A
3.10 V
8 kHz to 30 kHz
Double INT-A-PAK
Half bridge
FEATURES
• NPT IGBT technology
• 10 μs short circuit capability
• Low switching losses
• Rugged with ultrafast performance
• V_CE(on) with positive temperature coefficient
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Switching mode power supplies
• Inductive heating
• Electronic welder
DESCRIPTION
Vishay’s IGBT power module provides ultrafast switching
speed as well as short circuit ruggedness. It is designed for
applications such as electronic welders and inductive
heating.

ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
V_CES
Gate to emitter voltage
V_GES
Collector current
T_C = 25 °C
I_C
T_C = 80 °C
Pulsed collector current
I_CM ⁽¹⁾
t_p = 1 ms
Diode continuous forward current
I_F
Diode maximum forward current
I_FM(1)
Maximum power dissipation
P_D
T_J = 150 °C
Isolation voltage
V_ISOL
f = 50 Hz, t = 1 min
Note
(1) _{Repetitive rating: pulse width limited by maximum junction temperature.}
MAX.
1200
± 20
200
100
200
100
200
1136
2500
UNITS
V
A
W
V
Revision: 10-Jun-15
1
Document Number: 93413
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000