VS-GB100TH120U Datasheet, PDF (4/8 Pages) Vishay Siliconix – Molding Type Module IGBT, 2 in 1 Package, 1200 V and 100 A

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25
V_CC = 600 V
R_g = 5.6 Ω
20
V_GE = ± 15 V
T_J = 125 °C
15
10
E_on
5
E_off
0
0
50
100
150
200
I_C (A)
Fig. 3 - Switching Loss vs. I_C
VS-GB100TH120U
Vishay Semiconductors
40
V_CC = 600 V
35 _{IC = 100 A}
V_GE = ± 15 V
30 _{TJ = 125 °C}
25
20
E_on
15
E_off
10
5
0
0
10
20
30
40
50
60
R_g (Ω)
Fig. 4 - IGBT Switching Loss vs. R_g
250
Chip
200
Module
150
100
50 ^Rg ^{= 5.6 Ω}
V_GE = ± 15 V
T_J = 125 °C
0
0
350
700
1050
V_CE (V)
Fig. 5 - RBSOA
1400
10⁰
IGBT
10^-1
10^-2
10^-3
10^-5
10^-4
10^-3
10^-2
10^-1
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
Revision: 10-Jun-15
4
Document Number: 93413
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