SUP90N04-3M3P Datasheet, PDF (5/6 Pages) Vishay Siliconix – N-Channel 40 V (D-S) MOSFET

SUP90N04-3m3P
Vishay Siliconix
TYPICAL CHARACTERISTICS
100
25 °C, unless otherwise noted
1000
Limited by R_DS(on)*
100
T_J = 25 °C
10
T_J = 150 °C
1
0.00001
0.0001
0.001
0.01
0.1
Time (s)
Single Pulse Avalanche Current Capability vs. Time
1
100 μs
10
1 ms
10 ms
100 ms, 1 s
1
10 s, DC
0.1
T_A = 25 °C
Single Pulse
0.01
0.1
1
BVDSS Limited
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10^-4
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65902.
Document Number: 65902
S10-0632-Rev. A, 22-Mar-10
www.vishay.com
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