SUP90N04-3M3P Datasheet, PDF (3/6 Pages) Vishay Siliconix – N-Channel 40 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
160
V_GS = 10 V thru 3 V
0.0040
120
2V
0.0035
80
0.0030
40
0.0025
SUP90N04-3m3P
Vishay Siliconix
V_GS = 4.5 V
V_GS = 10 V
0
0
0.5
1.0
1.5
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
10
8
6
T_C = 25 °C
4
2
0
0
450
360
T_C = 125 °C
0.6
1.2
1.8
T_C = - 55 °C
2.4
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
T_C = 25 °C
270
T_C = - 55 °C
180
T_C = 125 °C
90
0
0
16
32
48
64
80
I_D - Drain Current (A)
Transconductance
Document Number: 65902
S10-0632-Rev. A, 22-Mar-10
0.0020
0
0.10
20
40
60
80
100
I_D - Drain Current (A)
On-Resistance vs. Drain Current
0.08
0.06
T_J = 150 °C
0.04
0.02
T_J = 25 °C
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
10
I_D = 24 A
8
V_DS = 8 V
6
V_DS = 15 V
4
V_DS = 24 V
2
0
0
15
30
45
60
75
90
Q_g - Total Gate Charge
Gate Charge
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