SUP90N04-3M3P Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 40 V (D-S) MOSFET

SUP90N04-3m3P
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
40
0.0033 at V_GS = 10 V
0.0041 at V_GS = 4.5 V
I_D (A)^d
90
90
Q_g (Typ.)
87
TO-220AB
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Power Supply
- Secondary Synchronous Rectification
• DC/DC Converter
D
GDS
Top View
Ordering Information: SUP90N04-3m3P-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
40
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
I_D
90^d
90^d
A
I_DM
160
Avalanche Current
I_AS
60
Single Avalanche Energy^a
L = 0.1 mH
E_AS
180
mJ
Maximum Power Dissipation^a
T_C = 25 °C
125^b
T_A = 25 °C^c
P_D
3.1
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)^c
Junction-to-Case (Drain)
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 65902
S10-0632-Rev. A, 22-Mar-10
Symbol
R_thJA
R_thJC
Limit
40
1
Unit
°C/W
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