SUP90N04-3M3P Datasheet, PDF (2/6 Pages) Vishay Siliconix – N-Channel 40 V (D-S) MOSFET

SUP90N04-3m3P
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS
V_DS = 0 V, I_D = 250 µA
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
V_DS = 40 V, V_GS = 0 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = 40 V, V_GS = 0 V, T_J = 125 °C
V_DS = 40 V, V_GS = 0 V, T_J = 150 °C
On-State Drain Current^a
I_D(on)
V_DS ≥ 10 V, V_GS = 10 V
Drain-Source On-State Resistance^a
R_DS(on)
V_GS = 10 V, I_D = 22 A
V_GS = 4.5 V, I_D = 20 A
Forward Transconductance^a
g_fs
V_DS = 15 V, I_D = 20 A
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
V_GS = 0 V, V_DS = 20 V, f = 1 MHz
Reverse Transfer Capacitance
C_rss
Total Gate Charge^c
Q_g
Gate-Source Charge^c
Q_gs
V_DS = 20 V, V_GS = 10 V, I_D = 20 A
Gate-Drain Charge^c
Q_gd
Gate Resistance
R_g
f = 1 MHz
Turn-On Delay Time^c
t_d(on)
Rise Time^c
Turn-Off Delay Time^c
t_r
t_d(off)
V_DD = 20 V, R_L = 2 Ω
I_D ≅ 10 A, V_GEN = 10 V, R_g = 1 Ω
Fall Time^c
t_f
Drain-Source Body Diode Ratings and Characteristics T_C = 25 °C^b
Continuous Current
I_S
Pulsed Current
I_SM
Forward Voltage^a
V_SD
I_F = 10 A, V_GS = 0 V
Reverse Recovery Time
t_rr
Peak Reverse Recovery Current
I_RM(REC)
I_F = 10 A, dI/dt = 100 A/µs
Reverse Recovery Charge
Q_rr
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min.
Typ.
Max.
Unit
40
V
1
2.5
± 250
nA
1
50
µA
250
50
A
0.0027 0.0033
Ω
0.0034 0.0041
169
S
5286
705
pF
283
87
131
15.3
nC
12.2
0.5
2.7
5.4
Ω
11
20
7
14
ns
45
68
7
14
90
A
160
0.72
1.2
V
42
63
ns
2.5
3.8
A
52
78
nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65902
S10-0632-Rev. A, 22-Mar-10