SUP90N04-3M3P Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 40 V (D-S) MOSFET

SUP90N04-3m3P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
2.2
1.7
10
T_J = 150 °C
1.2
T_J = 25 °C
1
0.7
I_D = 250 μA
0.1
0.0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
8000
6000
C_iss
4000
2000
C_oss
C_rss
0
0
10
20
30
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.0
I_D = 22 A
1.7
V_GS = 10 V
1.4
V_GS = 4.5 V
1.1
0.8
0.5
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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4
0.2
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Threshold Voltage
50
I_D = 250 μA
48
46
44
42
40
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
160
120
Package Limited
80
40
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating
Document Number: 65902
S10-0632-Rev. A, 22-Mar-10