SUP85N10-10_06 Datasheet, PDF (5/6 Pages) Vishay Siliconix – N-Channel 100-V (D-S) 175 °C MOSFET

THERMAL RATINGS
100
SUP/SUB85N10-10
Vishay Siliconix
1000
80
60
40
20
0
0
25 50 75 100 125 150 175
T_C − Ambient Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temterature
2
1 _{Duty Cycle = 0.5}
0.2
0.1
0.1
0.05
0.02
Single Pulse
100
*Limited
10
by r_DS(on)
1
T_C = 25 °C
Single Pulse
10 µs
100 µs
1 ms
10 ms
100 ms
dc
0.1
0.1
1
10
100
1000
V_DS − Drain-to-Source Voltage (V)
*V_GS minimum V_GS at which r_DS(on) is specified
Safe Operating Area
0.01
10^-4
10^-3
10^-2
10^-1
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?71141.
Document Number: 71141
S-61008–Rev. D, 12-Jun-06
www.vishay.com
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