SUP85N10-10_06 Datasheet, PDF (2/6 Pages) Vishay Siliconix – N-Channel 100-V (D-S) 175 °C MOSFET

SUP/SUB85N10-10
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_GS = 0 V, I_D = 250 µA
V_DS = V_GS, I_D = 250 µA
V_DS = 0 V, V_GS = ± 20 V
V_DS = 100 V, V_GS = 0 V
V_DS = 100 V, V_GS = 0 V, T_J = 125 °C
V_DS = 100 V, V_GS = 0 V, T_J = 175 °C
V_DS = ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 30 A
V_GS = 4.5 V, I_D = 20 A
V_GS = 10 V, I_D = 30 A, T_J = 125 °C
V_GS = 10 V, I_D = 30 A, T_J = 175 °C
V_DS = 15 V, I_D = 30 A
Input Capacitance
C_iss
Output Capacitance
C_oss
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
Reverse Transfer Capacitance
C_rss
Total Gate Charge^c
Q_g
Gate-Source Charge^c
Q_gs
V_DS = 50 V, V_GS = 10 V, I_D = 85 A
Gate-Drain Charge^c
Q_gd
Turn-On Delay Time^c
t_d(on)
Rise Time^c
t_r
V_DD = 50 V, R_L = 0.6 Ω
Turn-Off DelayTime^c
t_d(off)
I_D ≅ 85 A, V_GEN = 10 V, R_g = 2.5 Ω
Fall Time^c
t_f
Source-Drain Diode Ratings and Characteristics (T_C = 25 °C)^b
Continuous Current
I_S
Pulsed Current
I_SM
Forward Voltage^a
V_SD
I_F = 85 A, V_GS = 0 V
Reverse Recovery Time
t_rr
Peak Reverse Recovery Current
I_RM(REC)
I_F = 50 A, di/dt = 100 A/µs
Reverse Recovery Charge
Q_rr
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min
Typ
Max
100
1
3
± 100
1
50
250
120
0.0085 0.0105
0.010 0.0012
0.017
0.022
25
6550
665
265
105
160
17
23
12
25
90
135
55
85
130
195
85
240
1.0
1.5
85
140
4.5
7
0.17
0.35
Unit
V
nA
µA
A
Ω
S
pF
nC
ns
A
V
ns
A
µC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71141
S-61008–Rev. D, 12-Jun-06