SUP85N10-10_06 Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 100-V (D-S) 175 °C MOSFET

SUP/SUB85N10-10
Vishay Siliconix
N-Channel 100-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
r_DS(on) (Ω)
100
0.0105 at V_GS = 10 V
0.012 at V_GS = 4.5 V
TO-220AB
I_D (A)
85^a
FEATURES
• TrenchFET^® Power MOSFET
• 175 °C Maximum Junction Temperature
Available
RoHS*
COMPLIANT
D
TO-263
DRAIN connected to TAB
GD S
Top View
SUP85N10-10
ORDERING INFORMATION
Package
TO-220AB
TO-263
G DS
Top View
SUB85N10-10
Tin/Lead Plated
SUP85N10-10
SUB85N10-10
G
S
N-Channel MOSFET
Lead (Pb)-free
SUP85N10-10-E3
SUB85N10-10-E3
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 150 °C)
T_C = 25 °C
T_C = 125 °C
I_D
Pulsed Drain Current
I_DM
Avalanche Current
Single Pulse Avalanche Energy^b
L = 0.1 mH
I_AS
E_AS
Maximum Power Dissipation^b
T_C = 25 °C (TO-220AB and TO-263)
T_A = 25 °C (TO-263)^d
Operating Junction and Storage Temperature Range
P_D
T_J, T_stg
Limit
100
± 20
85^a
60^a
240
75
280
250^c
3.75
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve fo voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
PCB Mount (TO-263)^d
Free Air (TO-220AB)
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71141
S-61008–Rev. D, 12-Jun-06
Symbol
R_thJA
R_thJC
Limit
40
62.5
0.6
Unit
V
A
mJ
W
°C
Unit
°C/W
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