SUP85N10-10_06 Datasheet, PDF (3/6 Pages) Vishay Siliconix – N-Channel 100-V (D-S) 175 °C MOSFET

SUP/SUB85N10-10
Vishay Siliconix
TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
250
200
V_GS = 10 thru 6 V
200
5V
150
150
100
100
50
4V
50
0
0
250
200
150
100
3V
2
4
6
8
10
V_DS − Drain-to-Source Voltage (V)
Output Characteristics
T_C = - 55 °C
25 °C
125 °C
0
0
0.020
0.015
0.010
T_C = 125 °C
25 °C
- 55 °C
1
2
3
4
5
6
VGS^{− Gate-to-Source Voltage (V)}
Transfer Characteristics
V_GS = 4.5 V
V_GS = 10 V
0.005
50
0
0
10000
8000
6000
20
40
60
80
100
I_D − Drain Current (A)
Transconductance
C_iss
0.000
0
20
20
40
60
80
100 120
I_D − Drain Current (A)
On-Resistance vs. Drain Current
16
V_DS = 50 V
I_D = 85 A
12
4000
8
2000
0
0
C_rss
C_oss
15
30
45
60
75
V_DS − Drain-to-Source Voltage (V)
Capacitance
4
0
0
50
100
150
200
Q_g − Total Gate Charge (nC)
Gate Charge
Document Number: 71141
S-61008–Rev. D, 12-Jun-06
www.vishay.com
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